This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

Hersteller:
Springer Verlag GmbH
juergen.hartmann@springer.com
Tiergartenstr. 17
DE 69121 Heidelberg

Inhaltsangabe1 Introduction.- 2 Physics of GMR and TMR Devices.- 3 GMR Devices of Metallic Multilayers.- 4 Spin-Valve Devices.- 5 Tunnel-Type GMR (TMR) Devices.- 6 Magnetic Random Access Memory (MRAM).- 7 Other GMR Devices.